| 摘要 |
<p>A semiconductor device includes a semiconductor substrate (21), an insulation film (22, 23) formed on the semiconductor substrate, a film (241 - 243) formed on the insulation film having a side wall, and a side wall film (22A) formed on the insulation film so as to surround the side wall of the film (241 - 243). The side wall film (22A) has a slope and satisfies a condition a > d where a is a width of a bottom surface of the side wall film which is in contact with the insulation film and d is a thickness of the film.</p> |
