发明名称 |
CMOS STRUCTURE AND METHOD INCLUDING MULTIPLE CRYSTALLOGRAPHIC PLANES |
摘要 |
A complementary metal oxide semiconductor (CMOS) structure includes a semiconductor substrate having first mesa having a first ratio of channel effective horizontal surface area to channel effective vertical surface area. The CMOS structure also includes a second mesa having a second ratio of the same surface areas that is greater than the first ratio. A first device having a first polarity uses the first mesa as a channel and benefits from the enhanced vertical crystallographic orientation. A second device having a second polarity different from the first polarity uses the second mesa as a channel and benefits from the enhanced horizontal crystallographic orientation.
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申请公布号 |
US2007194373(A1) |
申请公布日期 |
2007.08.23 |
申请号 |
US20060276274 |
申请日期 |
2006.02.22 |
申请人 |
ANDERSON BRENT A;NOWAK EDWARD J;RANKIN JED H |
发明人 |
ANDERSON BRENT A.;NOWAK EDWARD J.;RANKIN JED H. |
分类号 |
H01L29/94 |
主分类号 |
H01L29/94 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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