| 摘要 |
PURPOSE:To reduce a thermal strain generated on manufacture or operation, and to obtain the device, each member thereof is not deformed, degenerated or broken and heat-resistant cycle property thereof is excellent, by bonding a metallic plate in specific thickness on an inorganic insulating member by using metallic solder and directly bonding a semiconductor element on the metallic plate. CONSTITUTION:Each of the semiconductor elements 402, the metallic plate 3 in 0.5-1.5mm. thickness on which the semiconductor elements 402 are loaded, an insulating plate 2 on which the metallic plate 3 is loaded, and a metallic support plate 1 on which the insulating plate 2 is loaded are unified by using a solder material 4. For example, the metallic support plate 1 consists of a copper plate in 3.2mm. thickness, the insulating plate 2 an alumina plate of 28X33X0.6t and the metallic plate 3 a copper plate in 0.5-1.5mm. thickness. These members containing the semiconductor elements 402 are each bonded collectively by Pb-60Sn group solder in 100mum thickness. W is metallized on the bonding surface of the alumina plate 2, and W is further plated with Ni in 5mum, and wetting property to solder is imparted. |
