SEMICONDUCTOR LIGHT AMPLIFIER

摘要

Provided is an SOA, which uses an InP substrate (11) as a semiconductor substrate and GaInNAs having tensile strain introduced as an active layer (14) and is not dependent on polarized wave. The characteristic of not being dependent on polarized wave is obtained by introducing tensile strain, and while outputting highly saturated light by thinning the active layer (14), the band gap of the active layer (14) is reduced and a gain peak wavelength is increased by using GaInNAs, which is provided by adding nitrogen (N) to GaInAs, as a material for the active layer (14). Thus, even there exists band filling to the active layer (14) at the time of applying a high current, high gain is achieved especially in C band and L band.