| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a flash memory element which can prevent the side face of a semiconductor substrate in an active region from being exposed when an element isolation film in an exposed region is etched when forming a control gate and a floating gate. SOLUTION: An etching process for adjusting the EFH of the element isolation film is carried out by a dry etching process under a condition that an excessive amount of a polymer is formed to form a first spacer on the side wall of a floating gate pattern. When the element isolation film is etched in the region exposed when the control gate and the floating gate are formed in the subsequent processes, the first spacer serves for an etching barrier layer, causing a second spacer to be formed on the side face of the semiconductor substrate in the active region. COPYRIGHT: (C)2007,JPO&INPIT
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