发明名称 Voltage supply circuit for memory array programming
摘要 According to one exemplary embodiment, a memory array includes a number of bitlines. The memory array further includes a voltage supply circuit, where the voltage supply circuit is configured to receive an operating voltage and a control signal and to output a low output voltage in a switching mode and a high output voltage in a programming mode. The low output voltage can be approximately equal to the operating voltage in the switching mode. In the programming mode, the high output voltage is greater than the operating voltage. According to this exemplary embodiment, the voltage supply circuit is in the programming mode when one of the bitlines is selected for programming. The voltage supply circuit is in the switching mode if none of the bitlines is selected for programming. The high output voltage can cause a bitline programming voltage to be applied to a selected bitline in the programming mode.
申请公布号 US7260014(B1) 申请公布日期 2007.08.21
申请号 US20050250913 申请日期 2005.10.14
申请人 SPANSION LLC 发明人 AKAOGI TAKAO;YANG NIAN
分类号 G11C5/14 主分类号 G11C5/14
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