发明名称 THIN FILM TRANSISTOR SUBSTRATE
摘要 <p>A TFT substrate is provided to shorten an interval of time for disposing a chip and reduce defective proportion by disposing one integrated driving chip in the peripheral region of a display region wherein the integrated driving chip controls driving of a liquid display panel. A substrate is prepared which has a display region and a driving region. A plurality of first switching devices are disposed as a matrix type in the display region. A plurality of gate lines(GL) are respectively connected in common to control electrodes of widthwise switching devices among the first switching devices. A plurality of data lines(DL) are respectively connected in common to a second current electrode of the lengthwise switching device among the switching devices. A gate driving circuit(140) sequentially scans the gate lines, disposed in the first region of the peripheral region to which one end of the gate lines is extended. A line block select circuit(150) inputs driving signals of a block unit, selects each line block of the data lines, and switches the driving signals of the block unit to data lines of the selected line block, disposed in the second region of the peripheral region to which the data lines are extended. An integrated driving chip(180) inputs external image data and external control signal, outputs driving control signals(GC) to the gate driving circuit, and outputs line block select signals(TG) and driving signals of a block unit to the line block select circuit, disposed in the second region.</p>
申请公布号 KR20070081236(A) 申请公布日期 2007.08.16
申请号 KR20060013032 申请日期 2006.02.10
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, JAE SUNG;LEE, HI KUK
分类号 H01L29/786 主分类号 H01L29/786
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