| 摘要 |
A method for removing photoresist on a semiconductor wafer and an LCD is provided to maximize the removal rate of photoresist through hydrolysis of water and photoresist and a reaction of photoresist and ozone gas by forming a thin water layer on a substrate and an LCD substrate and by making the water layer react with ozone gas. A semiconductor wafer(10) and an LCD(10) are transferred to a process chamber(90) by a loading apparatus. An ozone gas generating apparatus(40) generates ozone gas and supplies the ozone gas to the inside of the process chamber. A wafer vapor generating apparatus(20) heats DIW(deionized water)(50) and supplies the heated DIW to the inside of the process chamber. A high-temperature water generating apparatus(30) heats the DIW to a high temperature and cleans the semiconductor wafer and the LCD substrate in the process chamber. An exhaust apparatus(60) exhausts mixture gas and the high-temperature water having cleaned residual foreign substances. An injection nozzle(80) for injecting ozone gas can be installed in one side of the process chamber, and an injection nozzle(70) for injecting water vapor can be installed in the other side of the process chamber.
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