发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PROBLEM TO BE SOLVED: To perform excess current detection with high precision, while enlarging a dynamic range in a driver circuit. SOLUTION: A semiconductor integrated circuit device outputs a detection signal of excess current when a comparator 6 in a driver IC 1 compares the drain voltage of a drive transistor 2 generated by driving a load with the drain voltage of a current sensing transistor 5 generated by bias current Ibias, and then detects that excess current flows into the drive transistor 2. As for the threshold current the comparator 6 detects, the threshold current in the drive transistor 2 is adjusted arbitrarily by adjusting the gate width sizes of the drive transistor 2 and the current sensing transistor 5. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007201116(A) 申请公布日期 2007.08.09
申请号 JP20060017109 申请日期 2006.01.26
申请人 RENESAS TECHNOLOGY CORP 发明人 NUMAKURA KEIICHIRO;KOYAMA SHINICHI
分类号 H01L21/822;H01L27/04 主分类号 H01L21/822
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