OXY-CHALCOGENIDE BASED THIN FILM, METHOD FOR GROWING THE SAME, OXIDE SEMICONDUCTOR THIN FILM METHOD FOR GROWING THE SAME, PROCESS FOR FABRICATING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for growing oxy-chalcogenide based thin film excellent in mass productivity in which a p-type layer can be obtained and an oxy-chalcogenide based thin film can be grown uniformly over a large area.

SOLUTION: Solution vaporization CVD is employed for growing an oxy-chalcogenide based thin film. For example, a Cu thin film 102 is formed on a substrate 101 such as a YSZ substrate or an MgO substrate and then an amorphous LaCuOS thin film 103 is grown by solution vaporization CVD. For example, La(EDMDD)3is employed as an La material, and Cu(EDMDD)2is employed as a Cu material. Growth temperature is set at 400°C or less. Thereafter, the amorphous LaCuOS thin film 103 is crystallized by reactive solid phase epitaxial growth method thus obtaining a crystalline LaCuOS thin film 104.

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