| 摘要 |
A word line voltage generator for generating a word line voltage changed selectively according to temperature, and a flash memory device including the same and a word line voltage generating method thereof are provided to reduce threshold voltage distribution of a memory cell and to assure sensing margin of read data, by selectively changing a verify voltage or a read voltage in inverse proportion to temperature during a normal read operation or a read operation for program verify. In a word line voltage generator of a flash memory device including a plurality of memory cells, a read voltage generator(110) generates a read voltage and a verify voltage based on one reference voltage in response to an enable control signal during a read operation of the flash memory device or a read operation for program verify, and supplies the read voltage or the verify voltage to one of a plurality of global word lines in response to a row decoding signal. A control part(120) generates one of the reference voltages, in response to a read control signal or a verify control signal. When temperature is changed, the level of the read voltage or the verify voltage is changed in inverse proportion to the temperature. The memory cells include single-level cells.
|
