| 摘要 |
PROBLEM TO BE SOLVED: To provide a composition for an organic semiconductor capable of forming an organic semiconductor layer of high storage stability and excellent properties, a method of manufacturing a transistor capable of manufacturing a high-reliability transistor using the same, a method of manufacturing an active matrix device, a method of manufacturing an electro-optic device, and a method of manufacturing electronic equipment. SOLUTION: The composition for the organic semiconductor contains an organic semiconductor material which includes thiophene rings and alkyl chains, and an organic solvent which includes cis-decalin. The composition for the organic semiconductor is used for example to form an organic semiconductor layer 30 for transistors each having a source electrode 20a and a drain electrode 20b arranged mutually separated from each other, an organic semiconductor layer 30 arranged so as to cover the source electrode 20a and the drain electrode 20b, a gate insulating layer 40 arranged on the organic semiconductor layer 30, and a gate electrode 50 arranged on the gate insulating layer 40. COPYRIGHT: (C)2007,JPO&INPIT
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