COPPER INTERCONNECT WIRING AND METHOD OF FORMING THEREOF
摘要
<p>Capping layer or layers on a surface of a copper interconnect wiring layer for use in interconnect structures for integrated circuits and methods of forming improved integration interconnection structures for integrated circuits by the application of gas-cluster ion-beam processing. Reduced copper diffusion and improved electromigration lifetime result and the use of selective metal capping techniques and their attendant yield problems are avoided.</p>
申请公布号
EP1815507(A2)
申请公布日期
2007.08.08
申请号
EP20050848887
申请日期
2005.11.08
申请人
TEL EPION INC.
发明人
GEFFKEN, ROBERT, M.;HAUTALA, JOHN, J.;SHERMAN, STEVEN, R.;LEARN, ARTHUR, J.