A DEVICE WITH CHARGE STORAGE LAYER, DRIVING METHOD AND A FABRICATION METHOD THEREOF

摘要

An organic memory device, a driving method and a manufacturing method thereof are provided to enhance the stability of the device by preventing electric charges from penetrating into an unwanted portion using an improved charge storing layer composed of an insulator and metal or semiconductor grains in the insulator. An organic memory device includes a charge storing layer(25), wherein the charge storing layer is formed at a portion adjacent to one or more organic semiconductor layers(20,30). The charge storing layer includes an insulator body(24) and metal or semiconductor grains. The metal or semiconductor grains(22) are distributed in the insulator body. The charge storing layer is formed at a portion between two organic semiconductor layers.