| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a state detector for a secondary cell which can judge simply a memory state in the secondary cell with high accuracy, and to provide a detecting method of the state. <P>SOLUTION: The state detector for a secondary cell 40 which detects the state of the secondary cell 40 comprises a zero current potential variation calculation section 8 which computes the variation of no-load voltage in a predetermined period or an open circuit voltage as a variation of zero current potential of the secondary cell 40, a presumed charge and discharge amount calculation section 9 which computes the amount of presumed charge and discharge of the secondary cell based on the variation of the zero current potential, and an integrating charge and discharge calculation section 10 which computes the amount of charge and discharge of the secondary cell 40 by integrating the current value of the current in a predetermined period. Further, it comprises a memory state judging section 13 which judges the memory state in the secondary cell 40 by comparing the amount of presumed charge and discharge and the amount of integrated charge and discharge. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
