| 摘要 |
A method for fabricating a storage node contact in a semiconductor device includes forming a plurality of bit line patterns, each bit line pattern including a bit line hard mask formed over a bit line conductive layer, forming an inter-layer insulation layer filled between the bit line patterns, planarizing the inter-layer insulation layer until top portions of the bit line hard masks are exposed, partially etching the inter-layer insulation layer to form first open regions, enlarging a width of the first open regions, forming a capping layer to cover the top portions of the bit line hard masks and to cover a surface of the first open regions, etching the capping layer and remaining portions of the inter-layer insulation layer between the bit line patterns to form second open regions below the first open regions, and forming storage node contacts filling in the first and second open regions.
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