| 摘要 |
<p>The method involves forming/depositing insulating layers (31, 32) on support and source substrates, respectively, and activating the layers by plasma. The substrates are bonded by a molecular adhesion such that the layers are in contact along a bonding interface and form a final insulating layer (3). A rear part of the source substrate is removed to conserve the thickness of semiconductor material e.g. silicon, constituting an active layer (20), where a value of activation energy and thickness of the layers are chosen such that thickness of the layer (3) is lower than/equal to 50 nanometers. An independent claim is also included for a composite substrate comprising insulating layers. INORGANIC CHEMISTRY - The insulating layers are made of dielectric material e.g. oxides, nitrides and silicides of yttrium, hafnium, strontium and titanium, aluminum, zirconium, tantalum and titanium and silicon. The insulating layers are made of germanium oxynitrite. The active layer is made of silicon, germanium, silicon carbide, gallium nitride, gallium arsenide, indium phosphide and silicon germanium compound.</p> |
