| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a nonlinear element that can prevent an irreversible shift phenomenon in nonlinear characteristics caused by intrusion of hydrogen from a lower electrode into an insulating layer when an insulating layer containing at least hydrogen and nitrogen is used, and to provide a method for manufacturing an electro-optical device using the nonlinear element as a pixel switching element. SOLUTION: The nonlinear element 10x is a TFD (thin film diode) having a lower electrode 13x, an insulating layer 14x covering the surface side of the lower electrode 13x, and an upper electrode 15x opposing to the lower electrode 13x via the insulating layer 14x. A tantalum oxide film used as the insulating layer 14x contains hydrogen, nitrogen and tungsten. The lower electrode 13x is subjected to a dehydrogenation step to decrease a hydrogen content. COPYRIGHT: (C)2007,JPO&INPIT |
