| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor array substrate for forming a thin film transistor array at a reduced number of masks and a method for manufacturing the same. SOLUTION: The method includes a step of forming gate lines and gate electrodes in one direction on a substrate, a step of successively depositing a gate insulating layer, a semiconductor layer forming layer, and a data metallic layer by evaporation over the entire surface of the substrate including the gate lines and the gate electrodes, a step of selectively removing the data metallic layer, the semiconductor layer forming layer, and the gate insulating layer, patterning these layers so as to leave the data lines in a direction crossing the gate lines, and the semiconductor layer forming areas, a step of depositing the transparent electrodes by evaporation over entire surface of the substrate including the data lines, and a step of removing the prescribed thickness of the transparent electrodes, the data metal and the semiconductor layer forming layer, patterning the layers so as to leave the data line in the direction crossing the gate line and the semiconductor layer forming area, and a step of patterning the prescribed portions of the pixel regions to form the semiconductor layer in the semiconductor layer forming layer, the source/drain electrodes in the data metallic layer and the pixel electrodes coupled to the drain electrodes on the transparent electrodes. COPYRIGHT: (C)2007,JPO&INPIT |
