| 摘要 |
PROBLEM TO BE SOLVED: To provide an image display device which is equipped with a TFT having a high on/off ratio and a low-resistance n-type (or p-type) semiconductor layer and can display an extremely precise and smooth motion picture. SOLUTION: The low-resistance n-type (or p-type) semiconductor layer is formed by conducting a process of the ion implantation of nitrogen N into amorphous silicon which is a precursor semiconductor film (P2), a process of laser crystallization (P3), a process of the ion implantation of n-type (or p-type) dopants, and an annealing process for activating the dopants (P5) in this order in the laser annealing crystallization of polysilicon. In manufacturing the TFT, the low-resistance semiconductor layer is used for a source and a drain. Since C, N, and O impurities reduce the mobility of the TFT, there is used polysilicon in a range of contaminant concentrations of C≤3×10<SP>19</SP>cm<SP>-3</SP>, N≤5×10<SP>17</SP>cm<SP>-3</SP>, and O≤3×10<SP>19</SP>cm<SP>-3</SP>. COPYRIGHT: (C)2007,JPO&INPIT |
