| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging device for performing integral control action and minimizing the number of elements other than a photoelectric converter during photoelectric conversion. SOLUTION: A transfer gate TG2 is configured by arranging a polysilicon layer 54a through an insulating layer between buried photodiodes PD1 and PD2. By electrically connecting the transfer gate TG2 to an N-type floating diffusion region FD1, a potential is changed in accordance with the amount of photogenerated charge transferred to the N-type floating diffusion region FD1. Thus, an electric signal outputted from the buried photodiodes PD1 and PD2 is provided with a knee characteristic. COPYRIGHT: (C)2007,JPO&INPIT
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