发明名称 |
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE OBTAINED WITH SUCH A METHOD |
摘要 |
<p>The invention relates to a method of manufacturing a semiconductor device (10) comprising a field effect transistor, in which method a semiconductor body of silicon (12) with a substrate (11) is provided at a surface thereof with a source region (1) and a drain region (2) of a first conductivity type which are situated above a buried isolation region (3,4) and with a channel region (5), between the source and drain regions (1,2), of a second conductivity type, opposite to the first conductivity type, and with a gate region (6) separated from the surface of the semiconductor body (12) by a gate dielectric (7) and situated above the channel region (5), and wherein a mesa (M) is formed in the semiconductor body (12) in which the channel region (5) is formed and wherein the source and drain regions (1,2) are formed on both sides of the mesa (M) in a semiconductor region (8) that is formed using epitaxial growth, the source and drain regions (1,2) thereby contacting the channel region (5). According to the invention the semiconductor region (8) is formed contacting the mesa (M) over substantially the whole thickness of the semiconductor region (8) and is formed below the level of the gate dielectric (7). This method is more versatile and the device (10) obtained thus has an improved high-frequency behavior.</p> |
申请公布号 |
WO2007077540(A1) |
申请公布日期 |
2007.07.12 |
申请号 |
WO2007IB50022 |
申请日期 |
2007.01.04 |
申请人 |
NXP B.V.;NUTTINCK, SEBASTIEN;CURATOLA, GILBERTO;HIJZEN, ERWIN;MEUNIER-BEILLARD, PHILIPPE |
发明人 |
NUTTINCK, SEBASTIEN;CURATOLA, GILBERTO;HIJZEN, ERWIN;MEUNIER-BEILLARD, PHILIPPE |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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