发明名称 IMMERSION LITHOGRAPHY APPARATUS
摘要 <p>An immersion lithography apparatus is provided to prevent the contamination of a wafer and to perform effectively an immersion lithography process by isolating an immersion liquid from the wafer using a box type structure of an immersion unit. An immersion lithography apparatus includes a light source unit, a reticle stage, a projection lens unit(150) and a wafer stage(140). The immersion lithography apparatus further includes an immersion unit(130) arranged between the projection lens unit and the wafer stage. The immersion unit is used for storing an immersion liquid(170). The immersion unit includes a box type structure capable of isolating the immersion liquid from a wafer. The sidewalls and bottom of the box type structure are made of fluoro-polymer based compound.</p>
申请公布号 KR20070073051(A) 申请公布日期 2007.07.10
申请号 KR20060000528 申请日期 2006.01.03
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, YOUNG SIK
分类号 H01L21/027 主分类号 H01L21/027
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