发明名称 |
Semiconductor element, and method of forming silicon-based film |
摘要 |
<p>The present invention provides a semiconductor element comprising a semiconductor junction composed of silicon-based films, the element being characterized in that at least one of the silicon-based films contains a microcrystal, and microcrystal located in at least one interface region of the silicon-based films containing the microcrystal has no orientation property. Further, the present invention provides a semiconductor element comprising a semiconductor junction composed of silicon-based films, wherein at least one of the silicon-based films contains a microcrystal, and the orientation property of the microcrystal in the silicon-based film containing the microcrystal changes in a film thickness direction of the silicon-based film containing the microcrystal. In order to provide an inexpensive silicon-based film showing excellent performance, the present invention provides a silicon-based film having a shortened tact time, an increased film forming rate, and excellent characteristics, and a semiconductor element including this silicon-based film, and a semiconductor element using this silicon-based film and having excellent adhesion and environmental resistance.
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申请公布号 |
EP1241711(A3) |
申请公布日期 |
2007.07.04 |
申请号 |
EP20020005536 |
申请日期 |
2002.03.11 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
KONDO, TAKAHARU;OKABE, SHOTARO;SANO, MASAFUMI;SAKAI, AKIRA;HAYASHI, RYO;SUGIYAMA, SUICHIRO |
分类号 |
H01L31/0368;B32B9/00;H01L21/00;H01L21/336;H01L29/04;H01L29/786;H01L31/075;H01L31/18 |
主分类号 |
H01L31/0368 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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