SILICON NANOPARTICLE FIELD EFFECT TRANSISTOR AND TRANSISTOR MEMORY DEVICE

摘要

A silicon nanoparticle (18) transistor (30, 32, 34) and transistor memory device. The transistor of the invention has silicon nanoparticles (18), dimensioned on the order of 1nm, in a gate area (34) of a field effect transistor (30, 32, 34). The resulting transistor is a transistor in which single electron flow controls operation of the transistor. Room temperature operation is possible with the novel transistor structure by radiation assistance, with radiation being directed toward the silicon nanoparticles t o create necessary holes in the quantum structure for the flow of an electron. The transistor of the invention also forms the basis for a memory device. Th e device is a flash memory device which will store electrical charge instead o f magnetic effects.