发明名称 |
Manufacturing method for compound semiconductor device |
摘要 |
It is the object of the present invention to provide a manufacturing method for a compound semiconductor device capable of removing remaining organic substances without deteriorating a characteristic of the compound semiconductor device, wherein a surface of an i-type AlGaAs schottky layer is cleaned in a state where light is blocked using either one of ozonized (O<SUB>3</SUB>) water whose ozone concentration is at most 13 mg/L and hydrogenated (H<SUB>2</SUB>) water whose hydrogen ion concentration (pH) is from 6 to 8 inclusive, or using both of the ozonized water and the hydrogenated water after a schottky electrode made of Ti/Al/Ti is evaporated onto the exposed i-type AlGaAs schottky layer and a lift-off operation is performed using a remover.
|
申请公布号 |
US7238542(B2) |
申请公布日期 |
2007.07.03 |
申请号 |
US20040927441 |
申请日期 |
2004.08.27 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
KATO YOSHIAKI;YAMAGUCHI TUNEO;TAMURA AKIYOSHI |
分类号 |
G03F7/42;H01L21/00;C11D7/50;C11D11/00;H01L21/027;H01L21/304;H01L21/306;H01L21/311;H01L21/335;H01L21/338;H01L29/778;H01L29/812 |
主分类号 |
G03F7/42 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|