| 摘要 |
An apparatus and device for controlling high density plasma CVD apparatus is provided to uniformly maintain a wafer at a preset temperature embodiments relate by automatically adjusting an amount of He gas to be supplied to a rear side of a wafer. A valve assembly(160) and a pump(170) supply He gas to a rear side of a wafer provided in a high density plasma CVD apparatus. A controller adjusts a supply of the He gas to be within a preset range through control of the valve assembly and the pump so that an actual wafer temperature, which is previously determined, is maintained at a preset temperature during a deposition process. When the actual wafer temperature is identical with a measured temperature, the supply of the He gas is adjusted to be within a preset range.
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