| 摘要 |
A saddle fin transistor and a method for forming the same are provided to prevent the over-etching effect of a field oxide layer for forming a gate by etching the field oxide layer by using a photoresist pattern for covering only a protruded active region. A semiconductor substrate(10) having a protruded active region is prepared. A field oxide layer(20) is formed on the remaining region except for the active region. The height of the field oxide layer is equal to the height of the active region. A photoresist pattern is formed on the semiconductor substrate including the field oxide layer to expose a gate region. A groove is formed by etching the gate region of the exposed active region. The photoresist pattern is removed. The field oxide layer is etched to expose an upper end of the etched gate region and to round a lateral surface of the exposed upper end. A gate material is formed on the semiconductor substrate including the etched field oxide layer.
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