| 摘要 |
A method for performing IMD(Iner Metal Dielectric) CMP is provided to improve a polishing efficiency by verifying the uniformity of a wafer during the polishing process between loading and unloading of the wafer. A wafer to be subjected to CMP is loaded on an HCLU(Head Clean Load Unload) station(S302). The wafer loaded on the HCLU station is subjected to platen primary polishing(S304). A thickness of an insulation layer of the polished wafer is measured(S306), and the wafer is subjected to platen secondary polishing while adjusting pressing pressure of a head according to information on the measured thickness(S308). Then, the wafer is subjected to platen third polishing(S310), and the wafer is cleaned and unloaded(S312).
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