| 摘要 |
A page buffer of a semiconductor memory device and a copyback method using the same are provided to improve circuit integrity by comprising a single register, as a transfer circuit for inverting data, instead of main and cash registers. A bit line selection part(110) selectively connects an even bit line and an odd bit line of a memory cell array to a sensing node. A precharge part(120) precharges the potential of the sensing node to a predetermined level. A register(130) reads and latches data of the memory cell array during a copyback operation, and latches the data again after changing the potential of the sensing node by using the latched data value, and inverts and temporarily stores the data value.
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