| 摘要 |
A method of forming a doped semiconductor portion includes providing a semiconductor substrate with a surface, and providing protruding portions of a covering layer on the substrate surface, where the portions are arranged in a pattern of lines or segments of lines extending in a first direction. Portions of a resist layer are provided on the substrate surface, where the portions of the resist layer are arranged in a pattern of lines or segments of lines extending in a second direction, and the second direction intersects the first direction. The portions of the resist layer have a thickness d, the thickness d being measured perpendicularly with respect to the substrate surface. A tilted ion implantation step is then performed.
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