| 摘要 |
A processing time required for regeneration of a layer transferred wafer is reduced and the regeneration cost is lowered, while a removal amount at the regeneration is decreased the number of regeneration times is increased. A main surface of a semiconductor wafer ( 13 ) has a main flat portion ( 13 d) and a chamfered portion ( 13 c) formed in the periphery of the main flat portion ( 13 d), an ion implanted area ( 13 b) is formed by implanting ions only into the main flat portion ( 13 d), a laminated body ( 16 ) is formed by laminating the main flat portion ( 13 d) on a main surface of a support wafer ( 14 ), and moreover, the semiconductor wafer ( 13 ) is separated from a thin layer ( 17 ) in the ion implanted area ( 13 b) by heat treatment at a predetermined temperature so as to obtain a thick layer transferred wafer ( 12 ), which is to be regenerated. The main flat portion ( 13 d) of the semiconductor wafer ( 13 ) is formed to have a ring-shape step ( 13 e) protruding from the chamfered portion ( 13 c), and the semiconductor wafer ( 13 ) is separated from the thin layer ( 17 ) on the whole surface of the ion implanted area ( 13 b) so that no step is generated in the periphery thereby to obtain the layer transferred wafer ( 12 ).
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