| 摘要 |
PROBLEM TO BE SOLVED: To provide a film deposition device and a film deposition method where the control of a film deposition rate can be performed at high precision, and a film is deposited with high reproducibility allowing a mass-production of elements. SOLUTION: An MBE (Molecular Beam Epitaxial) device 1 is equipped with: molecular beam sources 31a, 31b of emitting corpuscle beams toward a substrate 34; an atomic absorption type film deposition monitor 24 of measuring the number of particles comprised in the corpuscle beams emitted from the molecular beam sources 31a, 31b; first to third inspection apparatuses 43a, 43b, 43c of inspecting and measuring the physical properties and/or chemical properties of a film deposited on the substrate 34 and the properties of the state of the device; and a processing unit 39 of controlling the molecular beam sources 31a, 31b. The processing unit 39 controls the molecular beam sources 31a, 31b based on the measured result from the atomic absorption type film deposition monitor 24 and the inspected result and the measured result from the first to third inspection apparatuses 43a, 43b, 43c. COPYRIGHT: (C)2007,JPO&INPIT
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