| 摘要 |
A method for fabricating a flash memory is provided to most effectively remove hydrogen by eliminating the hydrogen existing in an HDP(high density plasma) layer in a first heat treatment after the HDP layer is deposited so that the hydrogen is removed while the hydrogen isn't almost diffused. An insulation layer and a conductive layer are sequentially formed on a predetermined region of a semiconductor substrate(51). A trench mask is formed on the conductive layer. The conductive layer, the insulation layer and the semiconductor substrate are partially etched to form a trench(55) by using the trench mask. A gap-fill insulation layer having a thickness capable of burying the trench is formed on the resultant structure. After a pre-cleaning process is carried out, a heat treatment is performed to implant O3 gas. The gap-fill insulation layer is planarized to form an isolation layer by using a target in which the trench mask is exposed.
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