| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique which further improves thermal stability of a magnetoresistive element, by preventing interdiffusion among conductors (for example, vias and interconnects) for electrically connecting the magnetoresistive element to other element and layers constituting the magnetoresistive element. SOLUTION: A magnetoresistive device is provided with a magnetoresistive element 4, which includes a free ferromagnetic layer 10 having reversible free spontaneous magnetization, a fixed ferromagnetic layer 8 having fixed spontaneous magnetization, and a tunnel insulation layer 9 disposed between the free ferromagnetic layer 10 and the fixed ferromagnetic layer 8; a nonmagnetic conductor 3 electrically connected to the free ferromagnetic layer, without going through the intermediary of the tunnel insulation layer; and a diffusion-preventing structure 14 disposed between a free ferromagnetic layer 31 and the conductor 3. Next, the free ferromagnetic layer 10 includes the ferromagnetic layer 31, bonded directly to the tunnel insulating layer; and magnetization control structures 32, 34, and 35 bonded to the ferromagnetic layer 31, and includes a nonmagnetic element and a ferromagnetic material constituting the ferromagnetic layer 31. COPYRIGHT: (C)2007,JPO&INPIT
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