| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of suppressing an in-band tunnel current. <P>SOLUTION: The semiconductor device includes at least drain regions 9, 11, 14, a gate structural body 5 having a first sidewall; first insulating sidewall structural bodies 6, 7, and first conductive sidewall structural bodies 10, 13 which are electrically insulated from the gate structural body 5 and electrically connected to the drain regions 9, 11, 14. The first conductive sidewall structural bodies 10, 13 take potential substantially the same as that of the drain regions 9, 11, 14. Accordingly, an electric field is generated, which runs from the first conductive sidewall structural bodies 10, 13 to the gate structural body 5 via the first insulating sidewall structural bodies 6, 7. Thus, the concentration of the electric field runs from the drain regions 9, 11, 14 to the gate structural body 5 via a gate insulating film 3, and is mitigated so as to suppress the in-band tunnel current. <P>COPYRIGHT: (C)2007,JPO&INPIT |
