| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To form a highly reliable embedded pattern by sufficiently reducing the etching rate while keeping a high CMP rate. <P>SOLUTION: A metal polishing liquid to be disclosed contains (1) an oxidizing agent for the metal, (2) a dissolving agent for the oxidized metal, (3) a first protecting-film forming agent, such as an amino acid or an azole, which physically adsorbs and/or forms chemical bonds to the surface of the metal to thereby form a protecting film, (4) a second protecting-film forming agent, such as polyacrylic acid, polyamido acid or a salt thereof, which assists the first protecting-film forming agent in forming a protecting film, and (5) water. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
