发明名称 |
POLISHING COMPOSITION AND METHOD FOR HIGH SILICON NITRIDE TO SILICON OXIDE REMOVAL RATE RATIOS |
摘要 |
The invention provides a chemical-mechanical polishing composition comprising a cationic abrasive, a cationic polymer, an inorganic halide salt, and an aqueous carrier. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition. The polishing composition exhibits selectivity for removal of silicon nitride over removal of silicon oxide and polysilicon. |
申请公布号 |
WO2007067294(A2) |
申请公布日期 |
2007.06.14 |
申请号 |
WO2006US43481 |
申请日期 |
2006.11.08 |
申请人 |
CABOT MICROELECTRONICS CORPORATION |
发明人 |
DYSARD, JEFFREY;JOHNS, TIMOTHY |
分类号 |
C09G1/02 |
主分类号 |
C09G1/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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