发明名称 POLISHING COMPOSITION AND METHOD FOR HIGH SILICON NITRIDE TO SILICON OXIDE REMOVAL RATE RATIOS
摘要 The invention provides a chemical-mechanical polishing composition comprising a cationic abrasive, a cationic polymer, an inorganic halide salt, and an aqueous carrier. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition. The polishing composition exhibits selectivity for removal of silicon nitride over removal of silicon oxide and polysilicon.
申请公布号 WO2007067294(A2) 申请公布日期 2007.06.14
申请号 WO2006US43481 申请日期 2006.11.08
申请人 CABOT MICROELECTRONICS CORPORATION 发明人 DYSARD, JEFFREY;JOHNS, TIMOTHY
分类号 C09G1/02 主分类号 C09G1/02
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