发明名称 Recessed semiconductor device
摘要 A semiconductor structure includes a first semiconductor layer, a second semiconductor layer over the first semiconductor layer, a third semiconductor layer over the second semiconductor layer, and a fourth semiconductor layer over the third semiconductor layer. A first conductive portion is coupled to the first semiconductor layer, and a second conductive portion is formed over the first semiconductor layer.
申请公布号 US7229903(B2) 申请公布日期 2007.06.12
申请号 US20040925855 申请日期 2004.08.25
申请人 FREESCALE SEMICONDUCTOR, INC. 发明人 LI HSIN-HUA P.;GREEN BRUCE M.;HARTIN OLIN L.;LAN ELLEN Y.;WEITZEL CHARLES E.
分类号 H01L21/28;H01L21/44 主分类号 H01L21/28
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