| 摘要 |
PROBLEM TO BE SOLVED: To provide a nanocrystalline silicon quantum dot memory device and a related manufacturing method. SOLUTION: The manufacturing method for a nanocrystalline silicon quantum dot memory device includes the steps of forming a gate oxide film 108 on a silicon substrate active layer 104, forming a nanocrystalline silicon memory film 110 on the gate oxide 108 that includes a multicrystalline silicon/silicon dioxide laminated film 112, forming a control oxide film 118 on the nanocrystalline silicon memory film 110, forming a gate electrode 120 on the control oxide film 118, and forming source/drain regions 122 and 124 on the silicon active layer 104. The nanocrystalline silicon memory film 110 is formed by depositing an amorphous silicon layer by use of the CVD method and performing thermal oxidation processing on part of the amorphous silicon layer. The deposition and thermal oxidation processing of the amorphous silicon layer is repeated so that multilayer multicrystalline silicon/silicon dioxide laminated layers are formed. COPYRIGHT: (C)2007,JPO&INPIT
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