| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for film deposition capable of obtaining a high quality perovskite type oxide thin film, and to provide an oxide thin film element having a piezoelectric element formed of a thin film formed by this method. <P>SOLUTION: A method for film deposition is provided, for depositing on a substrate a perovskite type oxide thin film in which at least one site of site A and site B is composed of a plurality of kinds of elements, and the plurality of kinds of elements of at least one site have an element of different valency in this site, wherein the elements belonging to the site A and site B are classified into a plurality of groups so that the element of different valency belongs to the same group, and a raw material containing the element belonging to this group is supplied onto the substrate for each group in a separate step, respectively. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
