发明名称 |
APPARATUS AND PROCESS FOR PLASMA-ENHANCED ATOMIC LAYER DEPOSITION |
摘要 |
Embodiments of the invention provide an apparatus configured to form a material during an atomic layer deposition (ALD) process, such as a plasma-enhanced ALD (PE-ALD) process. In one embodiment, a showerhead assembly comprises a showerhead and a plasma baffle that are used to disperse process gases within a plasma-enhanced vapor deposition chamber. The showerhead plate comprises an inner area configured to position the plasma baffle therein and an outer area which has a plurality of holes for emitting a process gas. The plasma baffle comprises a conical nose disposed on an upper surface to receive another process gas, a lower surface to emit the process gas and a plurality of openings configured to flow the process gas from above the upper surface into a process region. The openings are preferably slots that are positioned at predetermined angle for emitting the process gas with a circular flow pattern.
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申请公布号 |
US2007128862(A1) |
申请公布日期 |
2007.06.07 |
申请号 |
US20060556756 |
申请日期 |
2006.11.06 |
申请人 |
MA PAUL;SHAH KAVITA;WU DIEN-YEH;GANGULI SESHADRI;MARCADAL CHRISTOPHE;WU FREDERICK C;CHU SCHUBERT S |
发明人 |
MA PAUL;SHAH KAVITA;WU DIEN-YEH;GANGULI SESHADRI;MARCADAL CHRISTOPHE;WU FREDERICK C.;CHU SCHUBERT S. |
分类号 |
H01L21/44;H01L23/34 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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