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发明名称
RELAXED SiGe LAYERS ON Si OR SILICON-ON-INSULATOR SUBSTRATES BY ION IMPLANTATION AND THERMAL ANNEALING
摘要
申请公布号
KR100724509(B1)
申请公布日期
2007.06.04
申请号
KR20057007781
申请日期
2005.05.02
申请人
发明人
分类号
H01L21/20;H01L21/265;H01L21/324;H01L21/762;H01L27/12
主分类号
H01L21/20
代理机构
代理人
主权项
地址
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