WAVELENGTH LOCKED LASER INCLUDING INTEGRATED WAVELENGTH SELECTING TOTAL INTERNAL REFLECTION (TIR) STRUCTURE

摘要

An integrated light emitting semiconductor device (10) having integrated feedback for wavelength locking comprises a semiconductor substrate (130) including a waveguide region (100) having a gain section (150) having a gain media therein, and an out-coupling perturbation (120) integrated with the device disposed proximate to the waveguide (100). A total internal reflection (TIR) structure (140) for providing optical feedback is integrated with the device and disposed in a spaced apart relation relative to the out-coupling perturbation (120). At least one of the out-coupling perturbation (120) and the TIR structure (140) include a grating or prism to provide dispersion to send different wavelengths of light in different directions. The out-coupling perturbation (120) is preferably a grating that has a grating period that is small enough to allow for only the +1 diffracted order to propagate.