| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a memory capable of improving a strength of a signal read out of a memory cell. <P>SOLUTION: This memory comprises: a first electrode film; a memory material film formed on the first electrode film while having a memory part and a thin film part with a thickness which is less than that of the memory part and is 15% or more of the thickness of the memory part as an average value; a second electrode film formed on the memory part of the memory material film; a memory cell array region comprising a plurality of simple matrix type memory cells having the first electrode film, the memory material film and the second electrode film; and an insulating film for controlling the diffusion of hydrogen formed in a different (as viewed in a plane) region from the memory cell array region which not only is formed covering a substantially entire surface of a peripheral circuit region containing a transistor and a region of the memory cell array region in which the memory cells are formed, but also is not formed in the peripheral circuit region containing a transistor. <P>COPYRIGHT: (C)2007,JPO&INPIT |
