| 摘要 |
A flash memory device is provided to reduce the area occupied by transistors by coupling a control circuit and a boosting voltage generation circuit through a first current mirror circuit, and to maintain a constant level of a boosting voltage regardless of the number of flash memory cells programmed at the same time. A flash memory cell array(10) includes a plurality of flash memory cells where a program current flows in response to input data. A control circuit(60) includes a plurality of dummy program current generation devices where a dummy program current with the same amplitude as the program current flows, in response to the input data. A current mirror circuit(70) provides a boosting current with the same amplitude as the sum current of the dummy program currents. The sum of the program currents and the boosting current is constant regardless of the number of flash memory cells programmed at the same time.
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