Vertical type semiconductor device and method of manufacturing the same

摘要

As and B are implanted to side surfaces of trenches 3 by a rotation ion implanting method, and by using a difference between these impurities in diffusion coefficient, the structure in which an n^--type epitaxial Si layer is interposed between trenches 3 is converted into a semiconductor structure consisting of n-type pillar layer 5 /p-type pillar layer 4 /n-type pillar layer 5 lining up. The structure can function substantially the same role as that of a super junction structure.