| 摘要 |
A nonvolatile semiconductor memory device using an adjacent bit line for transferring data and a driving method for the same are provided to suppress skew among data transferred on a data line and reduce the layout area. In a nonvolatile semiconductor memory device, a memory array(10) includes a number of first bit line groups(BL,BL,BL,BL) and a second bit line groups(BL,BL,BL,BL) arranged adjacent to each other. A number of first page buffers(PB,PB,PB,PB) are connected to the corresponding first bit line group and are arranged on the first side of the memory array, and transmit data to a data line(DL). A number of second page buffers(PB,PB,PB,PB) are connected to the corresponding second bit line group, and are arranged on the second side of the memory array symmetrical to the first side. A number of switches(SW,SW,SW,SW) enable data transmission between the first page buffer and the second page buffer, through the first bit line group and the second bit line group.
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