| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor storage where retention characteristics have been improved. SOLUTION: A silicon oxide film 14 is formed on a semiconductor substrate 11; a conductive film comprising a polysilicon film 15a and a silicide film 15b is formed on the silicon oxide film 14; the conductive film is etched for forming a gate electrode 15 and exposing the silicon oxide film; the semiconductor substrate 11 is exposed by removal; a silicon oxide film 17A for covering the surface of the semiconductor substrate 11 and the side of the gate electrode 15 is formed; an LDD region is formed at a pair of regions for holding an area under the gate electrode 15 in the semiconductor substrate 11; and a charge storage film, having an ONO laminated structure, is formed on one portion on the semiconductor substrate 11 and on the side of the gate electrode 15, where the charge storage film includes one portion (first protective film) in the silicon oxide film 17A, a charge storage insulating film (silicon nitride film), and a sidewall (silicon oxide film). COPYRIGHT: (C)2007,JPO&INPIT
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