| 摘要 |
PROBLEM TO BE SOLVED: To provide an anisotropic etching method by plasma on a silicon substrate, using an etching mask that makes it possible to obtain a notch part, defined correctly on a side surface. SOLUTION: A silicon substrate 18 is arranged on a substrate electrode 12 in the working range of a sulfatron 16, connected to a resonator 20 for microwave plasma excitation inside an etching chamber 10, where the substrate electrode 12 connected to a high-frequency generator 14 is arranged. Furthermore, a polymerization process and an etching process which continue alternately are implemented, by using the microwave plasma apparatus with a waveguide 22 for drawing reactive gas. COPYRIGHT: (C)2007,JPO&INPIT |
